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小爱AI音箱上电毫无反应，拆开是绿板，供电口是圆口，应该是S12A的，尝试TTL连接电脑，结果一直显示aml_nand_add_partition:1794 factory bad addr=85
NAND bbt detect factory Bad block at 10c0000 内容，停不下来，求教下是不是没救了
Connecting to COM3...
Connected.
AXG:BL1:d1dbf2:a4926f;FEAT:E0DC318C:2000 OC:F;EMMC:800;NAND:0;READ:0;0.0;CHK:0;
sdio debug board detected
TE: 23485
BL2 Built : 18:30:39, Aug 28 2018. axg g56303a2-dirty - liang.yang@droid11-sz
set vcck to 1140 mv
set vddee to 1070 mv
Board ID = 4
CPU clk: 1200MHz
DDR low power enabled
DDR3 chl: Rank0 16bit @ 792MHz
bist_test rank: 0 2f 09 55 38 13 5e 29 02 51 3c 18 60 00 00 00 00 00 00 00 00 00 00 00 00 590 - PASS
Rank0: 256MB(auto)-2T-11
AddrBus test pass!
NAND init
page0 page0->bbt:
0000000000000000000000000000000000000000000000000000000000000000
page0 bbt:
0000000000000000000000000000000000000000000000000000000000000000
Load FIP HDR from NAND, src: 0x0000c000, des: 0x01700000, size: 0x00004000
Load BL3x from NAND, src: 0x00010000, des: 0x01704000, size: 0x00080000
NOTICE: BL31: v1.3(release):a1a8551
NOTICE: BL31: Built : 15:59:55, Nov 9 2017
NOTICE: BL31: AXG normal boot!
NOTICE: BL31: BL33 decompress pass
[Image: axg_v1.1.3268-b93dd79 2017-12-01 14:22:18 huan.biao@droid12]
OPS=0x43
23 ce 61 36 ee 67 0 34 c5 1f 7a c9 bl30:axg ver: 9 mode: 0
bl30:axg thermal0
[0.014528 Inits done]
secure task start!
high task start!
low task start!
ERROR: Error initializing runtime service opteed_fast
U-Boot 2015.01 (Dec 24 2019 - 07:00:02), Build: jenkins-Mico_s12a_ota_publish-379
DRAM: 256 MiB
Relocation Offset is: 0ef17000
register usb cfg[0][1] = 000000000ff89690
NAND: nand id: 0xec 0xf1
128MiB, SLC, page size: 2048, OOB size: 64
NAND device id: ec f1 0 95 42 c6
NAND device: Manufacturer ID: 0xec, Chip ID: 0xec (Samsung M Generation NAND 1Gib FS33ND01GS108TFI0)
oob avail size 6
Creating 1 MTD partitions on "M Generation NAND 1Gib FS33ND01GS108TFI0":
0x000000000000-0x000000200000 : "bootloader"
M Generation NAND 1Gib FS33ND01GS108TFI0 initialized ok
nand id: 0xec 0xf1
128MiB, SLC, page size: 2048, OOB size: 64
NAND device id: ec f1 0 95 42 c6
NAND device: Manufacturer ID: 0xec, Chip ID: 0xec (Samsung M Generation NAND 1Gib FS33ND01GS108TFI0)
PLANE change!
aml_nand_init  obmul=1,oobfree.length=8,oob_size=64
oob avail size 8
bbt_start=20 env_start=24 key_start=32 dtb_start=40
nbbt: info size=0x400 max_scan_blk=24, start_blk=20
nbbt : phy_blk_addr=21, ec=0, phy_page_addr=0, timestamp=2
nbbt free list:
blockN=20, ec=0, dirty_flag=1
blockN=22, ec=-1, dirty_flag=0
blockN=23, ec=-1, dirty_flag=0
aml_nand_scan_rsv_info 1251: page_num=1
aml_nand_scan_rsv_info 1254
nbbt valid addr: 2a0000
aml_nand_bbt_check 1389 bbt is valid, reading.
aml_nand_read_rsv_info:397,read nbbt info to 2a0000
nenv: info size=0x10000 max_scan_blk=32, start_blk=24
nenv : phy_blk_addr=25, ec=57, phy_page_addr=0, timestamp=121
nenv free list:
blockN=24, ec=57, dirty_flag=1
blockN=26, ec=4, dirty_flag=1
blockN=27, ec=-1, dirty_flag=0
blockN=28, ec=-1, dirty_flag=0
blockN=29, ec=-1, dirty_flag=0
blockN=30, ec=-1, dirty_flag=0
blockN=31, ec=-1, dirty_flag=0
aml_nand_scan_rsv_info 1251: page_num=32
aml_nand_scan_rsv_info 1254
nenv valid addr: 330000
nkey: info size=0x8000 max_scan_blk=40, start_blk=32
nkey : phy_blk_addr=33, ec=0, phy_page_addr=0, timestamp=2
nkey free list:
blockN=32, ec=0, dirty_flag=1
blockN=34, ec=-1, dirty_flag=0
blockN=35, ec=-1, dirty_flag=0
blockN=36, ec=-1, dirty_flag=0
blockN=37, ec=-1, dirty_flag=0
blockN=38, ec=-1, dirty_flag=0
blockN=39, ec=-1, dirty_flag=0
aml_nand_scan_rsv_info 1251: page_num=16
aml_nand_scan_rsv_info 1254
nkey valid addr: 420000
ndtb: info size=0x20000 max_scan_blk=44, start_blk=40
ndtb : phy_blk_addr=41, ec=0, phy_page_addr=0, timestamp=2
ndtb free list:
blockN=40, ec=0, dirty_flag=1
blockN=42, ec=-1, dirty_flag=0
blockN=43, ec=-1, dirty_flag=0
aml_nand_scan_rsv_info 1251: page_num=64
aml_nand_scan_rsv_info 1254
ndtb valid addr: 520000
tpl: off 8388608, size 8388608
NAND bbt detect factory Bad block at 1000000
aml_nand_add_partition:1794 factory bad addr=80
NAND bbt detect factory Bad block at 1020000
aml_nand_add_partition:1794 factory bad addr=81
NAND bbt detect factory Bad block at 1040000
aml_nand_add_partition:1794 factory bad addr=82
NAND bbt detect factory Bad block at 1060000
aml_nand_add_partition:1794 factory bad addr=83
NAND bbt detect factory Bad block at 1080000
aml_nand_add_partition:1794 factory bad addr=84
NAND bbt detect factory Bad block at 10a0000
aml_nand_add_partition:1794 factory bad addr=85
NAND bbt detect factory Bad block at 10c0000
aml_nand_add_partition:1794 factory bad addr=86
NAND bbt detect factory Bad block at 10e0000
aml_nand_add_partition:1794 factory bad addr=87
NAND bbt detect factory Bad block at 1100000
aml_nand_add_partition:1794 factory bad addr=88
NAND bbt detect factory Bad block at 1120000
aml_nand_add_partition:1794 factory bad addr=89
NAND bbt detect factory Bad block at 1140000
aml_nand_add_partition:1794 factory bad addr=8a
NAND bbt detect factory Bad block at 1160000
aml_nand_add_partition:1794 factory bad addr=8b
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发表于 2025-1-8 11:21:04